Invention Grant
- Patent Title: Memory system
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Application No.: US17662423Application Date: 2022-05-07
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Publication No.: US11893282B2Publication Date: 2024-02-06
- Inventor: Shu-Liang Ning
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2111493134.8 2021.12.08
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C7/10 ; G11C11/4076 ; G11C11/4093

Abstract:
A memory system includes: a plurality of memory chips, wherein each of the memory chips has a parameter used to characterize a process corner of the memory chip; and a controller, wherein the controller is configured to: obtain the parameter of each of the memory chips, and adjust, based on the parameter, a delay of a read command sent to the memory chip corresponding to the parameter.
Public/Granted literature
- US20230176784A1 MEMORY SYSTEM Public/Granted day:2023-06-08
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