Invention Grant
- Patent Title: Method, device and system for testing memory devices
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Application No.: US17452857Application Date: 2021-10-29
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Publication No.: US11893284B2Publication Date: 2024-02-06
- Inventor: Xinwang Chen , Maosong Ma , Jianbin Liu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2110812751.3 2021.07.19
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C29/08

Abstract:
The present disclosure provides a method, device and system for testing memory devices. The testing method includes: receiving a test instruction, the test instruction being used to characterize a model of a memory device to be tested that is connected to a test platform; selecting, according to the test instruction, a testing method corresponding to the model of the memory device to be tested from a plurality of pre-stored testing methods as a target testing method; and executing the target testing method to test the memory device to be tested.
Public/Granted literature
- US20230015543A1 METHOD, DEVICE AND SYSTEM FOR TESTING MEMORY DEVICES Public/Granted day:2023-01-19
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