Invention Grant
- Patent Title: Method for refreshing row hammer, circuit for refreshing row hammer and semiconductor memory
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Application No.: US17807478Application Date: 2022-06-17
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Publication No.: US11894042B2Publication Date: 2024-02-06
- Inventor: Jixing Chen
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2111399125.2 2021.11.19
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/408
Abstract:
A method for refreshing row hammer includes the following operations. A row hammer refresh instruction for a target word line is determined. According to the row hammer refresh instruction, a preset row hammer refresh signal is set to a valid state. The valid state of the preset row hammer refresh signal indicates that the row hammer refresh instruction is performed in a first refresh period. In response to detecting that the row hammer refresh instruction is not completed within the first refresh period, the valid state of the preset row hammer refresh signal will be continued to a next refresh period of the first refresh period.
Public/Granted literature
- US20230162777A1 METHOD FOR REFRESHING ROW HAMMER, CIRCUIT FOR REFRESHING ROW HAMMER AND SEMICONDUCTOR MEMORY Public/Granted day:2023-05-25
Information query
