Embodiments of the present disclosure relate to the field of semiconductor technology, and provide an anti-fuse memory and a control method thereof. The anti-fuse memory is configured to generate a programming pulse signal based on a row strobe signal, a word line of the anti-fuse memory array is configured to receive the row strobe signal, and the anti-fuse memory array is programmed in response to the programming pulse signal. The embodiments of the present disclosure are at least advantageous to improving accuracy of reading data from the anti-fuse memory array and improving yield of the anti-fuse memory.