Invention Grant
- Patent Title: Indium phosphide substrate, semiconductor epitaxial wafer, and method for producing indium phosphide substrate
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Application No.: US17289524Application Date: 2020-06-04
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Publication No.: US11894225B2Publication Date: 2024-02-06
- Inventor: Shunsuke Oka , Hideki Kurita , Kenji Suzuki
- Applicant: JX METALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JX METALS CORPORATION
- Current Assignee: JX METALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP 19217552 2019.11.29 JP 20078636 2020.04.27
- International Application: PCT/JP2020/022198 2020.06.04
- International Announcement: WO2021/106249A 2021.06.03
- Date entered country: 2021-04-28
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B28D5/04 ; C30B25/18 ; C30B29/40 ; C30B33/10 ; H01L29/20
Abstract:
Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of −2.0 to 2.0 μm, as measured with the back surface of the indium phosphide substrate facing upward.
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