Invention Grant
- Patent Title: Laser annealing apparatus, laser annealing method, and method for manufacturing semiconductor device
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Application No.: US17375445Application Date: 2021-07-14
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Publication No.: US11894229B2Publication Date: 2024-02-06
- Inventor: Kenichi Ohmori , Suk-Hwan Chung , Ryosuke Sato , Nobuo Oku
- Applicant: JSW AKTINA SYSTEM CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: JSW AKTINA SYSTEM CO., LTD.
- Current Assignee: JSW AKTINA SYSTEM CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Sughrue Mion, PLLC
- Priority: JP 20124227 2020.07.21
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B23K26/03 ; H01L21/268

Abstract:
A laser annealing apparatus according to an embodiment includes a laser light source, an annealing optical system, a linear irradiation region along a Y-direction, a moving mechanism configured to change a relative position of the irradiation region with respect to the substrate along an X-direction, an illumination light source configured to generate illumination light for illuminating the substrate along a third direction, and a detector configured to detect detection light reflected, in a fourth direction, on the substrate illuminated by the illumination light so as to photograph an annealed part of the substrate in a linear field of view along the Y-direction. In a YZ-plane view, the third direction is inclined from the vertical direction and the fourth direction is inclined from the vertical direction.
Public/Granted literature
- US20220028690A1 LASER ANNEALING APPARATUS, LASER ANNEALING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-01-27
Information query
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