Invention Grant
- Patent Title: Semiconductor manufacturing device and method of polishing semiconductor substrate
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Application No.: US17111661Application Date: 2020-12-04
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Publication No.: US11894235B2Publication Date: 2024-02-06
- Inventor: Kiyohiko Toshikawa , Hiroyuki Baba
- Applicant: LAPIS SEMICONDUCTOR CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: JP 17159575 2017.08.22
- The original application number of the division: US16103250 2018.08.14
- Main IPC: H01L21/306
- IPC: H01L21/306 ; B24B37/30 ; B24B49/16

Abstract:
A semiconductor manufacturing device including a polishing head that is capable of retaining a semiconductor substrate; a polishing pad having a processing surface to be abutted to the semiconductor substrate retained by the polishing head, the processing surface including a groove; a platen that is capable of rotating about a rotary shaft running along a direction intersecting the processing surface, in a state in which the polishing pad is retained by the platen; a measuring section that outputs a measurement value indicating a height of the processing surface at a predetermined location along a circumference of a circle centered about the rotary shaft of the platen; and a derivation section that derives a depth of the groove from the measurement value of the measuring section.
Public/Granted literature
- US20210090894A1 SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD OF POLISHING SEMICONDUCTOR SUBSTRATE Public/Granted day:2021-03-25
Information query
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