Invention Grant
- Patent Title: Semiconductor substrate, method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
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Application No.: US17330369Application Date: 2021-05-25
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Publication No.: US11894272B2Publication Date: 2024-02-06
- Inventor: Mitsuhiko Ogihara
- Applicant: FILNEX INC.
- Applicant Address: JP Tokyo
- Assignee: FILNEX INC.
- Current Assignee: FILNEX INC.
- Current Assignee Address: JP Tokyo
- Agency: JCIPRNET
- Priority: JP 18230683 2018.12.10
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/306 ; H01L21/683 ; H01L21/02
Abstract:
To prevent the surface of a base substrate and the bottom surface of a separated semiconductor epitaxial layer from being bonded to each other even after a removal layer is removed, the semiconductor substrate includes a base substrate, a first removal layer provided on the base substrate, a second removal layer provided above the first removal layer, and a semiconductor epitaxial layer provided above the second removal layer, and an etching rate of the second removal layer for a predetermined etching material is larger than the etching rate of the first removal layer for the predetermined etching material.
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