Disclosed are metal-insulator-metal capacitors and integrated chips. In one embodiment, a metal-insulator-metal capacitor includes N electrodes and (N−1) passivation layers, wherein the N electrodes and the (N−1) passivation layers are alternately stacked on a substrate. N is an integer larger than 1. Thicknesses of the N electrodes gradually increase in a direction parallel to a normal direction of the substrate.