Invention Grant
- Patent Title: Method for fabricating an image sensing device having a primary grid and a second grid surrounding the primary grid
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Application No.: US17824952Application Date: 2022-05-26
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Publication No.: US11894404B2Publication Date: 2024-02-06
- Inventor: Yun-Hao Chen , Kuo-Yu Wu , Tse-Hua Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US16414498 2019.05.16
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
The present disclosure provides an optical structure and a method for fabricating an optical structure, the method includes forming a light detection region in a substrate, forming an isolation structure at surrounding the light detection region, and forming a primary grid over the isolation structure, including forming a metal layer over the isolation structure, forming a first dielectric layer over the metal layer, and partially removing the metal layer and the first dielectric layer with a first mask by patterning, and forming a secondary grid at least partially surrounded by the primary grid laterally.
Public/Granted literature
- US20220293654A1 IMAGE SENSING DEVICE WITH GRID STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2022-09-15
Information query
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