Invention Grant
- Patent Title: Semiconductor structure, preparation method of same, and semiconductor device
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Application No.: US17462041Application Date: 2021-08-31
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Publication No.: US11894418B2Publication Date: 2024-02-06
- Inventor: Xianlei Cao
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2110098759.8 2021.01.25
- Main IPC: H10B12/00
- IPC: H10B12/00 ; H01L49/02

Abstract:
A semiconductor structure, a preparation method of the same, and a semiconductor device are provided. The semiconductor structure includes a substrate, including an active area. A first electrode layer is arranged on the substrate and electrically connected to the active area. The first electrode layer extends in a direction perpendicular to the substrate. A dielectric layer is arranged on a surface of the first electrode layer. A second electrode layer is arranged on a surface of the dielectric layer. Each of the surface of the first electrode layer and the surface of the dielectric layer are provided with an uneven structure.
Public/Granted literature
- US20220238639A1 SEMICONDUCTOR STRUCTURE, PREPARATION METHOD OF SAME, AND SEMICONDUCTOR DEVICE Public/Granted day:2022-07-28
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