Invention Grant
- Patent Title: Semiconductor device, method for manufacturing the same, power circuit, and computer
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Application No.: US17545937Application Date: 2021-12-08
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Publication No.: US11894452B2Publication Date: 2024-02-06
- Inventor: Tatsuo Shimizu , Masahiko Kuraguchi , Toshiya Yonehara , Akira Mukai
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 18039276 2018.03.06
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/778 ; H01L29/423 ; H01L29/66 ; H01L29/205 ; H01L21/3065 ; H01L29/20 ; H01L21/223 ; H01L29/207 ; H01L29/51
Abstract:
A semiconductor device according to an embodiment includes a nitride semiconductor layer; an insulating layer; a first region disposed between the nitride semiconductor layer and the insulating layer and containing at least one element of hydrogen and deuterium; and a second region disposed in the nitride semiconductor layer, adjacent to the first region, and containing fluorine.
Public/Granted literature
- US20220102544A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, POWER CIRCUIT, AND COMPUTER Public/Granted day:2022-03-31
Information query
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