Invention Grant
- Patent Title: Vertical power devices fabricated using implanted methods
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Application No.: US17482019Application Date: 2021-09-22
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Publication No.: US11894455B2Publication Date: 2024-02-06
- Inventor: Daniel Jenner Lichtenwalner , Sei-Hyung Ryu , Arman Ur Rashid
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Sage Patent Group
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/808 ; H01L29/861 ; H01L29/66
Abstract:
A precursor for a vertical semiconductor device is provided with a substrate, a drift region over the substrate, and an upper precursor region over the drift region. The top surface of the precursor is substantially planar, and the substrate and the drift region are doped with a first dopant of a first polarity. In a first embodiment, a series of implants with a second dopant is provided in the upper precursor region via the top surface to form each of at least two gate regions such that each implant of the series of implants is provided at a different depth below the top surface. In a second embodiment, a series of implants with the first dopant is provided in the upper precursor region via the top surface to form a channel region that has at least a portion between two gate regions.
Public/Granted literature
- US20230087937A1 VERTICAL POWER DEVICES FABRICATED USING IMPLANTED METHODS Public/Granted day:2023-03-23
Information query
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