Invention Grant
- Patent Title: Semiconductor device having nanosheet transistor and methods of fabrication thereof
-
Application No.: US17218143Application Date: 2021-03-30
-
Publication No.: US11894460B2Publication Date: 2024-02-06
- Inventor: Chung-Wei Hsu , Kuo-Cheng Chiang , Mao-Lin Huang , Lung-Kun Chu , Jia-Ni Yu , Kuan-Lun Cheng , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: NZ CARR LAW OFFICE
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/49 ; H01L29/786 ; H01L29/66 ; H01L21/02
Abstract:
A semiconductor device structure is provided. The device includes one or more first semiconductor layers, and a dipole layer surrounding each first semiconductor layer of the one or more first semiconductor layers, wherein the dipole layer comprises germanium. The structure also includes a capping layer surrounding and in contact with the dipole layer, wherein the capping layer comprises silicon, one or more second semiconductor layers disposed adjacent the one or more first semiconductor layers. The structure further includes a gate electrode layer surrounding each first semiconductor layer of the one or more first semiconductor layers and each second semiconductor layer of the one or more second semiconductor layers.
Public/Granted literature
- US20220320342A1 SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF Public/Granted day:2022-10-06
Information query
IPC分类:
