Invention Grant
- Patent Title: Power amplifier circuit
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Application No.: US17215208Application Date: 2021-03-29
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Publication No.: US11894816B2Publication Date: 2024-02-06
- Inventor: Takayuki Tsutsui , Satoshi Tanaka
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JP 20059767 2020.03.30
- Main IPC: H03F3/24
- IPC: H03F3/24 ; H03F1/52

Abstract:
A power amplifier circuit includes a first amplifier that amplifies a first RF signal and outputs a second RF signal, a second amplifier that amplifies the second RF signal and outputs a third RF signal, a bias circuit that supplies a bias current or voltage to the first or second amplifier, and a bias adjustment circuit that adjusts the bias current or voltage on the basis of the first RF signal, the second RF signal, or the third RF signal. The bias adjustment circuit includes a first diode having an anode to which a control signal indicating a signal based on the first, second, or third RF signal is inputted, and a cathode connected to a ground. The bias circuit includes a bias transistor that outputs the bias current or voltage on the basis of a voltage at the anode of the first diode.
Public/Granted literature
- US20210305951A1 POWER AMPLIFIER CIRCUIT Public/Granted day:2021-09-30
Information query
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