- Patent Title: Variation of metal layer stack under under bump metallization (UBM)
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Application No.: US16854769Application Date: 2020-04-21
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Publication No.: US11894829B2Publication Date: 2024-02-06
- Inventor: Ute Steinhaeusser , Niklaas Konopka , Alexander Landel
- Applicant: RF360 Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: RF360 Singapore Pte. Ltd.
- Current Assignee: RF360 Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Loza & Loza LLP
- Main IPC: H03H9/05
- IPC: H03H9/05 ; H01L23/00 ; H03H9/64 ; H03H3/08 ; H10N30/06 ; H10N30/87

Abstract:
In certain aspects, a chip includes a pad, and a first passivation layer, wherein a first portion of the first passivation layer extends over a first portion of the pad. The chip also includes a first metal layer between the first portion of the pad and the first portion of the first passivation layer. The chip further includes an under bump metallization (UBM) electrically coupled to a second portion of the pad.
Public/Granted literature
- US20210143790A1 VARIATION OF METAL LAYER STACK UNDER UNDER BUMP METALLIZATION (UBM) Public/Granted day:2021-05-13
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