Invention Grant
- Patent Title: Bulk acoustic wave resonator
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Application No.: US16851729Application Date: 2020-04-17
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Publication No.: US11894833B2Publication Date: 2024-02-06
- Inventor: Jea Shik Shin , Duck Hwan Kim , Chul Soo Kim , Sang Uk Son , In Sang Song , Moon Chul Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR 20110127686 2011.12.01
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H9/02 ; H03H3/02

Abstract:
Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
Public/Granted literature
- US20200244249A1 BULK ACOUSTIC WAVE RESONATOR Public/Granted day:2020-07-30
Information query
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