Integrated circuitry comprising a memory array comprises strings of memory cells comprising laterally-spaced memory blocks individually comprising a first vertical stack comprising alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The conductive tiers individually comprise a horizontally-elongated conductive line. A second vertical stack is aside the first vertical stack. The second vertical stack comprises an tipper portion and a lower portion. The upper portion comprises vertically alternating first tiers and second insulating tiers that are of different composition relative one another. The lower portion comprises an upper polysilicon-comprising layer, a lower polysilicon-comprising layer, an intervening-material layer vertically between the tipper and lower polysilicon-comprising layers. An upper intermediate layer is vertically between the upper polysilicon-comprising layer and the intervening-material layer. A lower intermediate layer is vertically between the lower polysilicon-comprising layer and the intervening-material layer. The lower intermediate layer and the upper intermediate layer comprise at least one of (a), (b), and (c), where (a): a hafnium oxide; (b): a bilayer comprising silicon nitride and comprising silicon dioxide positioned vertically relative one another, the silicon nitride in the bilayer being closer to the intervening-material layer than is the silicon dioxide in the bilayer; and (c): SiOxNy, where each of “x” and “y” is from 1 atomic percent to 90 atomic percent of the total of the Si, the O, and the N in the SiOxNy. Methods are disclosed.