Invention Grant
- Patent Title: Devices with field effect transistors
-
Application No.: US18003493Application Date: 2021-06-18
-
Publication No.: US11898983B2Publication Date: 2024-02-13
- Inventor: Boyan Boyanov , Rico Otto , Jeffrey G. Mandell
- Applicant: Illumina, Inc.
- Applicant Address: US CA San Diego
- Assignee: Illumina, Inc.
- Current Assignee: Illumina, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe, Martens, Olson & Bear, LLP
- International Application: PCT/US2021/038125 2021.06.18
- International Announcement: WO2022/005780A 2022.01.06
- Date entered country: 2022-12-27
- Main IPC: G01N27/414
- IPC: G01N27/414

Abstract:
Devices and methods of using the devices are disclosed which can provide scalability, improved sensitivity and reduced noise for sequencing polynucleotide. Examples of the devices include a biological or solid-state nanopore, a field effect transistor (FET) sensor with improved gate controllability over the channel, and a porous structure.
Public/Granted literature
- US20230184711A1 DEVICES WITH FIELD EFFECT TRANSISTORS Public/Granted day:2023-06-15
Information query