Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17695263Application Date: 2022-03-15
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Publication No.: US11900982B2Publication Date: 2024-02-13
- Inventor: Chang Hyun Kim , Seok Bo Shim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR 20210163829 2021.11.24
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/408

Abstract:
A semiconductor device may include: a first receiver configured to receive a chip select signal from a receiving node to which a termination resistor is coupled and configured to generate a first internal chip select signal; a command pulse generation circuit configured to generate a command pulse for entering into a self-refresh operation based on an internal command address and the first internal chip select signal; and an operation control circuit configured to, when the semiconductor device enters the self-refresh operation based on the command pulse, generate a resistor value change signal that adjusts the value of the termination resistor.
Public/Granted literature
- US20230162775A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-05-25
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