Leveraging stochastic physical characteristics of resistive switching devices to generate data having very low cross correlation among bits of that data is disclosed. Data generated from stochastic physical characteristics can also be referred to as physical unclonable feature—or function—(PUF) data. Additionally, error correction functions for PUF data generated from resistive switching memory cells are provided. The error correction functions facilitate additional redundancy and longevity of PUF data, among other benefits. Different embodiments include addressing arrangements to incorporate ECC parity bits among generated PUF data bits, even for differential PUF bits respectively defined by multiple memory cells in different portions of a resistive memory array.