Invention Grant
- Patent Title: Positive TCO voltage to dummy select transistors in 3D memory
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Application No.: US17507119Application Date: 2021-10-21
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Publication No.: US11901007B2Publication Date: 2024-02-13
- Inventor: Ken Oowada , Natsu Honda
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/14 ; G11C16/34 ; H01L25/065 ; H10B43/10 ; H10B43/27

Abstract:
Technology for applying a positive temperature coefficient (Tco) voltage to a control terminal of a dummy select transistor. The dummy select transistor resides on a NAND string having non-volatile memory cells and a regular select transistor. The dummy select transistor is typically ON (or conductive) during memory operations such as selected string program, read, and verify. In an aspect, the positive Tco voltage is applied to the control terminal of a dummy select transistor during a program operation. Applying the positive Tco voltage during program operations reduces or eliminates program disturb to the dummy select transistor. In some aspects, the dummy select transistor is used to generate a gate induced drain leakage (GIDL) current during an erase operation. In some aspects, the dummy select transistor is a depletion mode transistor.
Public/Granted literature
- US20230128177A1 POSITIVE TCO VOLTAGE TO DUMMY SELECT TRANSISTORS IN 3D MEMORY Public/Granted day:2023-04-27
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