Invention Grant
- Patent Title: Memory device and memory system capable of using redundancy memory cells
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Application No.: US17735860Application Date: 2022-05-03
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Publication No.: US11901032B2Publication Date: 2024-02-13
- Inventor: Hyung-Sik Won , Hyungsup Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR 20170143429 2017.10.31 KR 20170149360 2017.11.10
- The original application number of the division: US16875375 2020.05.15
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C29/00 ; G11C29/44 ; G11C16/34 ; G11C13/00 ; G11C29/52 ; G11C16/30 ; G11C29/04

Abstract:
A memory system includes a memory device and a memory controller. The memory device includes a memory cell array including normal memory cells and redundancy memory cells suitable for replacing failed memory cell among the normal memory cells, and a device controller for activating reserved memory cells which are included in the redundancy memory cells and not used to replace the failed memory cell. The memory controller controls the memory device, when a first memory cells are accessed more than a threshold access number, to move data stored in the first memory cells to the reserved memory cells and replace the first memory cells with the reserved memory cells.
Public/Granted literature
- US20220262452A1 MEMORY DEVICE AND MEMORY SYSTEM Public/Granted day:2022-08-18
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