A system includes: a high bandwidth memory (HBM) including a first sensing unit configured to generate one or more first environmental signals corresponding to a first transistor in a first memory cell, and a second sensing unit configured to generate one or more second environmental signals corresponding to a second transistor in a second memory cell; and a differentiated dynamic voltage and frequency scaling (DDVFS) device configured to perform the following (1) for a first set of the memory cells which includes the first memory cell, controlling temperature by adjusting one or more first transistor-temperature-affecting (TTA) parameters of the first set based on the one or more first environmental signals, and (2) for a second set of the memory cells which includes the second memory cell, controlling temperature by adjusting one or more second TTA parameters of the second set based on the one or more second environmental signals.