Invention Grant
- Patent Title: Method for forming an interconnect structure
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Application No.: US17349063Application Date: 2021-06-16
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Publication No.: US11901226B2Publication Date: 2024-02-13
- Inventor: Wen-Kuei Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/308 ; H01L21/311
Abstract:
The present disclosure relates to a method of forming an interconnect structure. The method can include providing a semiconductor substrate; depositing a photoresist and a BARC layer on the semiconductor substrate; forming an opening in the photoresist and the BARC layer and a portion of the semiconductor substrate; depositing a conductive material to fill the opening; and planarizing the conductive material and the semiconductor substrate.
Public/Granted literature
- US20210313227A1 METHOD FOR FORMING AN INTERCONNECT STRUCTURE Public/Granted day:2021-10-07
Information query
IPC分类:
