Invention Grant
- Patent Title: Integrated circuit device with low threshold voltage
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Application No.: US17750579Application Date: 2022-05-23
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Publication No.: US11901241B2Publication Date: 2024-02-13
- Inventor: Chung-Liang Cheng , Ziwei Fang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- The original application number of the division: US16573866 2019.09.17
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L29/423 ; H01L29/786 ; H01L21/28

Abstract:
A method of manufacturing a semiconductor device is provided. A substrate is provided. The substrate has a first region and a second region. An n-type work function layer is formed over the substrate in the first region but not in the second region. A p-type work function layer is formed over the n-type work function layer in the first region, and over the substrate in the second region. The p-type work function layer directly contacts the substrate in the second region. And the p-type work function layer includes a metal oxide.
Public/Granted literature
- US20220285225A1 Integrated Circuit Device With Low Threshold Voltage Public/Granted day:2022-09-08
Information query
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