Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
-
Application No.: US16924968Application Date: 2020-07-09
-
Publication No.: US11901288B2Publication Date: 2024-02-13
- Inventor: Tetsuya Iida , Yasutaka Nakashiba , Shinichi Uchida
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Rimon P.C.
- Agent Tomoki Tanida
- Main IPC: H03F3/187
- IPC: H03F3/187 ; H01L23/522 ; H01L49/02 ; H03M1/12 ; H03F3/04
Abstract:
A semiconductor device includes a semiconductor substrate, a semiconductor element, and a multilayer wiring. The semiconductor element is formed on the semiconductor substrate. The multilayer wiring includes a wiring electrically connected with the semiconductor element, and a first inductor. The multilayer wiring is formed on the semiconductor substrate such that the multilayer wiring covers the semiconductor element. The first inductor is formed such that the first inductor electrically isolated from the wiring and is magnetically connected with the wiring.
Public/Granted literature
- US20220013457A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-01-13
Information query
IPC分类:
