Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US17465511Application Date: 2021-09-02
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Publication No.: US11901337B2Publication Date: 2024-02-13
- Inventor: Yasuo Otsuka
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 21008958 2021.01.22
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L25/00 ; H01L23/00 ; H01L21/48 ; H01L21/56 ; H01L23/498 ; H01L25/10

Abstract:
A semiconductor device includes a first wiring substrate having a first surface and a second surface opposite to the first surface, and including a plurality of first electrode pads on the first surface, and a second wiring substrate having a third surface facing the first surface and a fourth surface opposite to the third surface, and including a plurality of second electrode pads on the third surface. A plurality of first semiconductor chips are stacked between the first surface and the third surface. A first columnar electrode extends in an oblique direction with respect to a first direction substantially perpendicular to the first surface and the third surface, and connects between the plurality of first electrode pads and the plurality of second electrode pads. A first resin layer covers the plurality of first semiconductor chips and the first columnar electrode between the first surface and the third surface.
Public/Granted literature
- US20220238490A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-07-28
Information query
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