- Patent Title: Method for fabricating semiconductor device with stacking structure
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Application No.: US17563346Application Date: 2021-12-28
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Publication No.: US11901350B2Publication Date: 2024-02-13
- Inventor: Tse-Yao Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: MUNCY, GEISSLER, OLDS & LOWE, P.C.
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L25/065 ; H01L25/10 ; H01L23/00 ; H01L23/498

Abstract:
The present application discloses a method for fabricating a semiconductor device including providing a first stacking structure comprising a first controller die, and a plurality of first storage dies sequentially stacked on the first controller die; providing a second stacking structure comprising a second controller die, and a plurality of second storage dies sequentially stacked on the second controller die; bonding the first controller die onto a bottom die through a plurality of first interconnect units; and bonding the second controller die onto the bottom die through a plurality of second interconnect units. The plurality of first storage dies respectively comprise a plurality of first storage units configured as a floating array. The plurality of second storage dies comprise a plurality of second storage units respectively comprising an insulator-conductor-insulator structure.
Public/Granted literature
- US20230207550A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH STACKING STRUCTURE Public/Granted day:2023-06-29
Information query
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