A semiconductor device that includes a semiconductor substrate; a first capacitance section on the semiconductor substrate, the first capacitance section including a first electrode layer, a first dielectric layer, and a second electrode layer; a second capacitance section on the semiconductor substrate, the second capacitance section including a third electrode layer, a second dielectric layer, and a fourth electrode layer; a first external electrode; a second external electrode; a first lead wire led out from the first capacitance section to the first external electrode and having an inductance L1; and a second lead wire led out from the second capacitance section to the second external electrode and having an inductance L2, wherein an electrostatic capacity C1 of the first capacitance section and an electrostatic capacity C2 of the second capacitance section are different, and L1/L2=0.8 to 1.2.