A method for manufacturing a semiconductor structure includes: a substrate is provided, in which the substrate includes an array region and a peripheral region adjacent to each other, and the array region includes a buffer region connected with the peripheral region; a first dielectric layer, a first supporting layer, a second dielectric layer, a second supporting layer and a third dielectric layer, which are successively stacked onto one another, are formed on the substrate; a groove-type lower electrode, which at least penetrates through the third dielectric layer and the second supporting layer, is formed in the buffer region; the third dielectric layer is removed through a wet etching process; and the second supporting layer in the peripheral region is etched after the third dielectric layer is removed.