Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US17383828Application Date: 2021-07-23
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Publication No.: US11901409B2Publication Date: 2024-02-13
- Inventor: Pei-Yu Chou , Tze-Liang Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/76 ; H01L29/06 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L29/08
Abstract:
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.
Public/Granted literature
- US20230022101A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2023-01-26
Information query
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