Invention Grant
- Patent Title: Source/drain structure having multi-facet surface
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Application No.: US17106764Application Date: 2020-11-30
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Publication No.: US11901452B2Publication Date: 2024-02-13
- Inventor: Yu-Lien Huang , Tung Ying Lee , Winnie Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: HAYNES AND BOONE, LLP
- The original application number of the division: US14552904 2014.11.25
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/165 ; H01L21/02 ; H01L21/762 ; H01L21/8234 ; H01L27/088 ; H01L29/06
Abstract:
A fin-like field-effect transistor (FinFET) device is disclosed. The device includes a semiconductor substrate having a source/drain region, a plurality of isolation regions over the semiconductor substrate and a source/drain feature in the source/drain region. The source/drain feature includes a multiple plug-type portions over the substrate and each of plug-type portion is isolated each other by a respective isolation region. The source/drain feature also includes a single upper portion over the isolation regions. Here the single upper portion is merged from the multiple plug-type portions. The single upper portion has a flat top surface facing away from a top surface of the isolation region.
Public/Granted literature
- US20210111282A1 Source/Drain Structure and Manufacturing the Same Public/Granted day:2021-04-15
Information query
IPC分类:
