Invention Grant
- Patent Title: Contaminant collection on SOI
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Application No.: US17665497Application Date: 2022-02-05
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Publication No.: US11901462B2Publication Date: 2024-02-13
- Inventor: Honglin Guo , Zachary K Lee , Jingjing Chen
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Yudong Kim; Frank D. Cimino
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/66 ; H01L21/265 ; H01L29/40 ; H01L21/266

Abstract:
An integrated circuit includes an SOI substrate having a semiconductor layer over a buried insulator layer; the semiconductor layer contains white space regions that include a PWELL region. An electronic device includes an NWELL region in the semiconductor layer, a dielectric over the NWELL region, and a polysilicon plate over the dielectric. A sacrificial NWELL ring is adjacent to and separated from the NWELL region by a first gap.
Public/Granted literature
- US20230307557A1 CONTAMINANT COLLECTION ON SOI Public/Granted day:2023-09-28
Information query
IPC分类: