Invention Grant
- Patent Title: Methods and systems for UV LED structures
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Application No.: US17345992Application Date: 2021-06-11
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Publication No.: US11901484B2Publication Date: 2024-02-13
- Inventor: Zihao Yang , Mengnan Zou , Mingwei Zhu , David Masayuki Ishikawa , Nag Patibandla
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/02 ; H01L33/06 ; H01L33/12 ; H01L33/32 ; H01L33/14
Abstract:
Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.
Public/Granted literature
- US20220399474A1 METHODS AND SYSTEMS FOR UV LED STRUCTURES Public/Granted day:2022-12-15
Information query
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