Invention Grant
- Patent Title: Electrode structure and semiconductor light-emitting device
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Application No.: US18307645Application Date: 2023-04-26
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Publication No.: US11901489B2Publication Date: 2024-02-13
- Inventor: Ryosuke Ishimaru , Yohei Ito , Yasuo Nakanishi
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP 19033071 2019.02.26
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/38
Abstract:
An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.
Public/Granted literature
- US20230261145A1 ELECTRODE STRUCTURE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2023-08-17
Information query
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