Described are light emitting diode (LED) devices comprising a mesa with semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer. The mesa has a top surface and at least one side wall, the at least one side wall defining a trench having a bottom surface. A passivation layer is on the at least one side wall and on the top surface of the mesa, the passivation layer comprises one or more a low-refractive index material and distributed Bragg reflector (DBR). A p-type contact is on the top surface of the mesa, and an n-type contact on the bottom surface of the trench.