Invention Grant
- Patent Title: Semiconductor device and power conversion apparatus
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Application No.: US17872157Application Date: 2022-07-25
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Publication No.: US11901839B2Publication Date: 2024-02-13
- Inventor: Mao Kawamura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Agent Richard C. Turner
- Priority: JP 21195088 2021.12.01
- Main IPC: H02M7/48
- IPC: H02M7/48 ; H02M7/537 ; H02M1/088

Abstract:
A semiconductor device includes: a first circuit including semiconductor switching elements connected in parallel, each semiconductor switching element having a first electrode, a second electrode, and a third electrode and being configured to be controlled, according to a voltage between the first electrode and the third electrode, to attain conduction or non-conduction between the second electrode and the third electrode; and a control unit connected to the first electrode of each semiconductor switching element and configured to control the voltage between the first electrode and the third electrode. The semiconductor device is configured to satisfy a first condition that an impedance Zg on a first path between the first electrodes of the respective semiconductor switching elements is higher, by at least a set value, than an impedance Zs on a third path making connection between the third electrodes of the respective semiconductor switching elements.
Public/Granted literature
- US20230170823A1 SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS Public/Granted day:2023-06-01
Information query
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