The present disclosure discloses an etching composition. The etching composition includes: a component A: oxidizing agent 1-30 wt %; a component B: inorganic acid 0.5-20 wt %; a component C: organic acid 0-15 wt %; a component D: chelating agent 0.01-15 wt %; a component E: ionic compound and/or other inorganic acids except the inorganic acid in the component B 0-0.1 wt %; and deionized water.