Invention Grant
- Patent Title: Method of evaluating cleanliness, method of determining cleaning condition, and method of manufacturing silicon wafer
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Application No.: US17392652Application Date: 2021-08-03
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Publication No.: US11920257B2Publication Date: 2024-03-05
- Inventor: Takashi Muramatsu , Hirokazu Kato
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP 16064071 2016.03.28
- The original application number of the division: US16087879
- Main IPC: C04B35/565
- IPC: C04B35/565 ; C23C16/44 ; C30B29/06 ; G01N27/62 ; H01J37/32 ; H01L21/02 ; H01L21/304 ; C30B23/02 ; C30B29/36 ; G01N27/623 ; G01N33/00

Abstract:
A method of evaluating cleanliness of a member having a silicon carbide surface, the method including bringing the silicon carbide surface into contact with a mixed acid of hydrofluoric acid, hydrochloric acid and nitric acid; concentrating the mixed acid brought into contact with the silicon carbide surface by heating; subjecting a sample solution obtained by diluting a concentrated liquid obtained by the concentration to quantitative analysis of metal components by Inductively Coupled Plasma-Mass Spectrometry; and evaluating cleanliness of the member having a silicon carbide surface on the basis of a quantitative result of metal components obtained by the quantitative analysis.
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