Invention Grant
- Patent Title: Flash-integrated high bandwidth memory appliance
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Application No.: US17833219Application Date: 2022-06-06
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Publication No.: US11921638B2Publication Date: 2024-03-05
- Inventor: Krishna T. Malladi , Hongzhong Zheng
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G06F12/08
- IPC: G06F12/08 ; G06F12/0866 ; G06F12/12 ; G06F12/0868 ; G06F12/0897

Abstract:
According to some embodiments of the present invention, there is provided a hybrid cache memory for a processing device having a host processor, the hybrid cache memory comprising: a high bandwidth memory (HBM) configured to store host data; a non-volatile memory (NVM) physically integrated with the HBM in a same package and configured to store a copy of the host data at the HBM; and a cache controller configured to be in bi-directional communication with the host processor, and to manage data transfer between the HBM and NVM and, in response to a command received from the host processor, to manage data transfer between the hybrid cache memory and the host processor.
Public/Granted literature
- US20220300426A1 FLASH-INTEGRATED HIGH BANDWIDTH MEMORY APPLIANCE Public/Granted day:2022-09-22
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