- Patent Title: Memory including clock generation circuit and duty cycle adjustment
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Application No.: US17448891Application Date: 2021-09-26
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Publication No.: US11923043B2Publication Date: 2024-03-05
- Inventor: Kai Tian , Yuxia Wang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2011173788.8 2020.10.28
- Main IPC: G11C8/18
- IPC: G11C8/18 ; G11C7/22 ; H03K3/017 ; H03K3/03

Abstract:
A memory includes: a clock generation circuit, configured to generate a first oscillation signal and a second oscillation signal. The first oscillation signal and the second oscillation signal have a same frequency but opposite phases, and a duty cycle of the first oscillation signal and a duty cycle of the second oscillation signal are both within a first preset range. The memory further includes a differential input circuit, which is configured to receive a first external signal and a second external signal, and generate a first internal signal and a second internal signal. The clock generation circuit is configured to monitor the duty cycle of the first internal signal or the duty cycle of the second internal signal, and enable the duty cycle of the first internal signal or the duty cycle of the second internal signal to be within a second preset range.
Public/Granted literature
- US20220130440A1 MEMORY Public/Granted day:2022-04-28
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