Invention Grant
- Patent Title: Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium
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Application No.: US17477200Application Date: 2021-09-16
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Publication No.: US11923191B2Publication Date: 2024-03-05
- Inventor: Shoma Miyata , Kimihiko Nakatani , Takayuki Waseda , Takashi Nakagawa , Motomu Degai
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP 20163759 2020.09.29
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/04 ; C23C16/455 ; C23C16/52 ; H01J37/32 ; H01L21/285

Abstract:
A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.
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