Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US17875253Application Date: 2022-07-27
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Publication No.: US11923203B2Publication Date: 2024-03-05
- Inventor: Chih-Piao Chuu , Ming-Yang Li , Lain-Jong Li
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: STUDEBAKER & BRACKETT PC
- The original application number of the division: US16732205 2019.12.31
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/441 ; H01L29/24 ; H01L29/66 ; H01L29/786
Abstract:
A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.
Public/Granted literature
- US20220367207A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-11-17
Information query
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