Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US17553851Application Date: 2021-12-17
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Publication No.: US11923205B2Publication Date: 2024-03-05
- Inventor: Kun-Ju Li , Ang Chan , Hsin-Jung Liu , Wei-Xin Gao , Jhih-Yuan Chen , Chun-Han Chen , Zong-Sian Wu , Chau-Chung Hou , I-Ming Lai , Fu-Shou Tsai
- Applicant: UNITED MICROELECTRONICS CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORPORATION
- Current Assignee: UNITED MICROELECTRONICS CORPORATION
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/47 ; H01L21/762

Abstract:
A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.
Public/Granted literature
- US20230197467A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2023-06-22
Information query
IPC分类: