Invention Grant
- Patent Title: Semiconductor device and method of forming
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Application No.: US17361474Application Date: 2021-06-29
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Publication No.: US11923263B2Publication Date: 2024-03-05
- Inventor: Jen-Yuan Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-Chu
- Agency: COOPER LEGAL GROUP, LLC
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/56 ; H01L25/065

Abstract:
A semiconductor device includes a substrate, a chip underlying the substrate, a chip overlying the substrate, and a dummy die overlying the substrate. A pattern of the dummy die includes a first interior sidewall and a second interior sidewall, and a stress relief material between the first interior sidewall and the second interior sidewall to form a dummy die stress balance pattern.
Public/Granted literature
- US20220301963A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING Public/Granted day:2022-09-22
Information query
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