Invention Grant
- Patent Title: Semiconductor package including a trench in a passivation layer
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Application No.: US17203312Application Date: 2021-03-16
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Publication No.: US11923314B2Publication Date: 2024-03-05
- Inventor: Ik Kyu Jin , Jin Su Kim , Ki Ju Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR 20200074048 2020.06.18
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/00 ; H01L23/31 ; H01L25/10

Abstract:
A semiconductor package includes a connection structure including a redistribution layer, a plurality of under bump metal layers electrically connected to the redistribution layer, a passivation layer which overlaps at least portions of side faces of the plurality of under bump metal layers, and includes a first trench disposed between under bump metal layers adjacent to each other, a surface mounting element which is on the under bump metal layers adjacent to each other, connected to the redistribution layer, and overlaps the first trench, and an underfill material layer that is between a portion of the passivation layer and the surface mounting element, and is in the first trench. The first trench extends in a first direction and includes a first sub-trench having a first width in a second direction, and a second sub-trench having a second width different from the first width in the second direction.
Public/Granted literature
- US20210398908A1 SEMICONDUCTOR PACKAGE INCLUDING A TRENCH IN A PASSIVATION LAYER Public/Granted day:2021-12-23
Information query
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