Invention Grant
- Patent Title: Modifying ferroelectric properties of hafnium oxide with hafnium nitride layers
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Application No.: US17042306Application Date: 2019-03-26
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Publication No.: US11923404B2Publication Date: 2024-03-05
- Inventor: Hyungsuk Alexander Yoon , Zhongwei Zhu
- Applicant: LAM RESEARCH CORPORATION
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- International Application: PCT/US2019/023987 2019.03.26
- International Announcement: WO2019/195024A 2019.10.10
- Date entered country: 2020-09-28
- Main IPC: C23C16/34
- IPC: C23C16/34 ; C23C16/40 ; C23C16/455 ; C23C16/505 ; C23C16/52 ; C23C16/56 ; H01J37/32 ; H01L21/02 ; H01L49/02
Abstract:
A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes depositing an HfO2 layer on a substrate, depositing a hafnium nitride (HfN) layer on the HfO2 layer; and annealing the HfO2 layer and the HfN layer to form ferroelectric hafnium HfO2.
Public/Granted literature
- US20210028273A1 MODIFYING FERROELECTRIC PROPERTIES OF HAFNIUM OXIDE WITH HAFNIUM NITRIDE LAYERS Public/Granted day:2021-01-28
Information query
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