Invention Grant
- Patent Title: Semiconductor structure with extended contact structure
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Application No.: US17666051Application Date: 2022-02-07
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Publication No.: US11923413B2Publication Date: 2024-03-05
- Inventor: Ta-Chun Lin , Kuo-Hua Pan , Jhon-Jhy Liaw , Chao-Ching Cheng , Hung-Li Chiang , Shih-Syuan Huang , Tzu-Chiang Chen , I-Sheng Chen , Sai-Hooi Yeong
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- The original application number of the division: US16868625 2020.05.07
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/02 ; H01L21/8234 ; H01L21/8238 ; H01L27/088 ; H01L27/092 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/94
Abstract:
Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.
Public/Granted literature
- US20220157938A1 SEMICONDUCTOR STRUCTURE WITH EXTENDED CONTACT STRUCTURE Public/Granted day:2022-05-19
Information query
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