Invention Grant
- Patent Title: Power Schottky barrier diodes with high breakdown voltage and low leakage current
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Application No.: US17244394Application Date: 2021-04-29
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Publication No.: US11923463B2Publication Date: 2024-03-05
- Inventor: Yuhao Zhang , Ming Xiao
- Applicant: Yuhao Zhang , Ming Xiao
- Applicant Address: US VA Blacksburg
- Assignee: Virginia Tech Intellectual Properties, Inc.
- Current Assignee: Virginia Tech Intellectual Properties, Inc.
- Current Assignee Address: US VA Blacksburg
- Agency: Johnson, Marcou, Isaacs & Nix LLC
- Agent John S. Sears
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/06 ; H01L29/20 ; H01L29/205 ; H01L29/417 ; H01L29/66
Abstract:
This disclosure provides a diode including a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type. The diode also includes a plurality of sidewalls exposed in the semiconductor region defining at least one trench extending through the at least one two-dimensional carrier channel and a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the plurality of sidewalls and in contact with the at least one two-dimensional carrier channel. The diode also includes an anode material in contact with at least a portion of the semiconductor region and in contact with at least a portion of the material of the second conductivity type, and a cathode material in contact with the at least one two-dimensional carrier channel.
Public/Granted literature
- US20220352390A1 POWER SCHOTTKY BARRIER DIODES WITH HIGH BREAKDOWN VOLTAGE AND LOW LEAKAGE CURRENT Public/Granted day:2022-11-03
Information query
IPC分类:
